Question

A pure semiconductor like Ge or Si, when doped with a small amount of suitable impurity, becomes an extrinsic semiconductor. In thermal equilibrium, the electron and hole concentration in it are related to the concentration of intrinsic charge carriers. A p-type or n-type semiconductor can be converted into a p-n junction by doping it with suitable impurity. Two processes, diffusion and drift take place during formation of a p-n junction. A semiconductor diode is basically a p-n junction with metallic contacts provided at the ends for the application of an external voltage. A p-n junction diode allows currents to pass only in one direction when it is forward biased. Due to this property, a diode is widely used to rectify alternating voltages, in half-wave or full wave configuration.

Explain the characteristics of a p-n junction diode that makes it suitable for its use as a rectifier.

With the help of a circuit diagram, explain the working of a full wave rectifier.

Two halves of a silicon crystal (A and B) are doped with arsenic and boron respectively, forming a p-n junction in it. A battery is connected across it as shown in the figure. (a) Will the junction be forward biased or reverse biased ? Give reason. (b) Draw V-I graph for this arrangement.