Question

Draw the circuit diagrams for obtaining the V – I characteristics of a p-n junction diode. Explain briefly the salient features of the V – I characteristics in (i) forward biasing, and (ii) reverse biasing.

On the basis of energy band diagrams, distinguish between (i) an insulator, (ii) a semiconductor, and (iii) a conductor.

A pure Si crystal having 5 × 10²⁸ atoms m⁻³ is dopped with 1 ppm concentration of antimony. If the concentration of holes in the doped crystal is found to be 4.5 × 10⁹ m⁻³, the concentration (in m⁻³) of intrinsic charge carriers in Si crystal is about

In the energy-band diagram of n-type Si, the gap between the bottom of the conduction band EC and the donor energy level ED is of the order of :