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Ge is doped with As. Due to doping,
An n-type semiconducting Si is obtained by doping intrinsic Si with :
Assertion (A) : The temperature coefficient of resistance is positive for metals and negative for p-type semiconductors. Reason (R) : The charge carriers in metals are negatively charged, whereas the majority charge carriers in p-type semiconductors are positively charged.
When an intrinsic semiconductor is doped with a small amount of trivalent impurity, then :
Differentiate between intrinsic and extrinsic semiconductors.
At a certain temperature in an intrinsic semiconductor, the electrons and holes concentration is 1·5 × 10¹⁶ m⁻³. When it is doped with a trivalent dopant, hole concentration increases to 4·5 × 10²² m⁻³. In the doped semiconductor, the concentration of electrons (nₑ) will be :
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