Assertion (A) : The temperature coefficient of resistance is positive for metals and negative for p-type semiconductors. Reason (R) : The charge carriers in metals are negatively charged, whereas the majority charge carriers in p-type semiconductors are positively charged.
A pure Si crystal having 5 × 10²⁸ atoms m⁻³ is dopped with 1 ppm concentration of antimony. If the concentration of holes in the doped crystal is found to be 4.5 × 10⁹ m⁻³, the concentration (in m⁻³) of intrinsic charge carriers in Si crystal is about
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