Question

At a certain temperature in an intrinsic semiconductor, the electrons and holes concentration is 1·5 × 10¹⁶ m⁻³. When it is doped with a trivalent dopant, hole concentration increases to 4·5 × 10²² m⁻³. In the doped semiconductor, the concentration of electrons (nₑ) will be :

In an extrinsic semiconductor, the number density of holes is 4 × 10²⁰ m⁻³. If the number density of intrinsic carriers is 1.2 × 10¹⁵ m⁻³, the number density of electrons in it is