Question

At a certain temperature in an intrinsic semiconductor, the electrons and holes concentration is 1·5 × 10¹⁶ m⁻³. When it is doped with a trivalent dopant, hole concentration increases to 4·5 × 10²² m⁻³. In the doped semiconductor, the concentration of electrons (nₑ) will be :

At a given temperature, the number of intrinsic charge carriers in a semiconductor is 2.0 × 10¹⁰ cm⁻³. It is doped with pentavalent impurity atoms. As a result, the number of holes in it becomes 8 × 10³ cm⁻³. The number of electrons in the semiconductor is