At a certain temperature in an intrinsic semiconductor, the electrons and holes concentration is 1·5 × 10¹⁶ m⁻³. When it is doped with a trivalent dopant, hole concentration increases to 4·5 × 10²² m⁻³. In the doped semiconductor, the concentration of electrons (nₑ) will be :
In the energy band diagram of a semiconductor, if more charge carriers are seen near valence band. It would be
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