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A pure Si crystal having 5 × 10²⁸ atoms m⁻³ is dopped with 1 ppm concentration of antimony. If the concentration of holes in the doped crystal is found to be 4.5 × 10⁹ m⁻³, the concentration (in m⁻³) of intrinsic charge carriers in Si crystal is about
Differentiate between intrinsic and extrinsic semiconductors.
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