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Ge is doped with As. Due to doping,
An n-type semiconducting Si is obtained by doping intrinsic Si with :
How does the energy gap of an intrinsic semiconductor effectively change when doped with a (a) trivalent impurity, and (b) pentavalent impurity ? Justify your answer in each case.
Si is doped with a pentavalent element. The energy required to set the additional electron free is about :
Explain the following, giving reasons :
Answer the following giving reasons:
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