A pure semiconductor like Ge or Si, when doped with a small amount of suitable impurity, becomes an extrinsic semiconductor. In thermal equilibrium, the electron and hole concentration in it are related to the concentration of intrinsic charge carriers. A p-type or n-type semiconductor can be converted into a p-n junction by doping it with suitable impurity. Two processes, diffusion and drift take place during formation of a p-n junction. A semiconductor diode is basically a p-n junction with metallic contacts provided at the ends for the application of an external voltage. A p-n junction diode allows currents to pass only in one direction when it is forward biased. Due to this property, a diode is widely used to rectify alternating voltages, in half-wave or full wave configuration.

Extrinsic Semiconductors: n-type and p-type, p-n Junction Formation and Depletion Region | PadhAiPro

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CASE_STUDIESExtrinsic Semiconductors: n-type and p-typep-n Junction Formation and Depletion RegionCBSE PYQ4 sub-questions

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